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PD - 94694
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
G
HEXFET(R) Power MOSFET
D
IRFBE30S IRFBE30L
VDSS = 800V RDS(on) = 3.0
S
ID = 4.1A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2Pak IRFBE30S TO-262 IRFBE30L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
4.1 2.6 16 125 1.0 20 260 4.1 13 2.0 -55 to + 150
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current
W W/C V mJ A mJ V/ns C
c Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
c
d
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
--- --- ---
Typ.
--- 0.50 ---
Max.
1.0 --- 62
Units
C/W
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IRFBE30S/IRFBE30L
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
800 --- --- 2.0 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.90 --- --- --- --- --- --- --- --- --- --- 12 33 82 30 4.5 7.5 1300 310 190 --- --- 3.0 4.0 --- 100 500 100 -100 78 9.6 45 --- --- --- --- --- --- --- --- ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 2.5A V VDS = VGS, ID = 250A S VDS = 100V, ID = 2.5A A VDS = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = 400V VGS = 10V, See Fig. 6 & 13 VDD = 400V ns ID = 4.1A RG = 12 RD = 95, See Fig. 10 D nH Between lead,
f
f
f
6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
G
S
pF
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 480 1.8 4.1 A 16 1.8 720 2.7 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
p-n junction diode. TJ = 25C, IS = 4.1A, VGS = 0V TJ = 25C, IF = 4.1A di/dt = 100A/s
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). VDD=50V, starting TJ = 25C, L=29mH, RG=25,
ISD 4.1A, di/dt 100A/s, VDD 600, Pulse width 300s; duty cycle 2%.
TJ 150C.
I AS = 4.1A. (See Figure 12).
2
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IRFBE30S/IRFBE30L
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3
IRFBE30S/IRFBE30L
4
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IRFBE30S/IRFBE30L
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5
IRFBE30S/IRFBE30L
6
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